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Molecular Beam Epitaxy, MBE System

MBE from Dr. Eberl MBE-Komponenten, Germany

MBE, Molecular Beam Epitaxy

OCTOPLUS 300 / 400 / 500 / 500 EBV / 600 / 600 EBV / OCTOPLUS-O 400, Thin Film System (OCTOPLUS 500 for PVD Application), Organic Deposition System
Dr. Eberl MBE-Komponenten GmbH, Germany


Dr. Eberl MBE-Komponenten사는 MBE와 표면 과학 및 다양한 UHV 응용 분야를 위한 박막 증착 장비를 제조 공급하며, 제품군으로 evaporation source, effusion cell, electron beam evaporator, sublimation source, 가스 소스 및 고객의 요구에 맞는 다양한 장비를 갖추고 있습니다. Dr. Eberl MBE-Komponenten은 약 30년 동안 전 세계 2000여 이상의 고객에게 2000가지 이상의 effusion cell과 다양한 종류의 evaporation source, MBE 시스템을 공급했습니다.
당사 (주)연진에스텍은 Dr. Eberl MBE-Komponenten의 MBE 시스템과 소스를 판매, 서비스합니다. 
 
 
 
 

 

 

 

 

 

 

 

 

 

Molecular Beam Epitaxy, MBE OCTOPLUS Systems 

 

300 

400 

500 

500 EBV 

600 

600 EBV 

O-400 

Thin Film System 
Applications 
Semiconductors, Metals, Oxides, Organics 
III-V, II-VI or  
other materials 
III-V, II-VI or  
other materials 
SiGe, Metals, Oxides 
III-V, II-VI or  
other materials 
Si/SiGe(Sn) epitaxial growth 
Growth of oxides and metals 
CIGS, Kesterite or CdTe deposition 
Size of chamber 
300 mm ID
450 mm ID
550 mm ID
550 mm ID
600 mm ID
600 mm ID
450 mm ID 
550 mm ID
Base pressure 
< 5x10-11 mbar 
< 5x10-11 mbar 
< 5x10-11 mbar 
< 5x10-11 mbar
< 5x10-11 mbar 
< 5x10-11 mbar
< 5x10-11 mbar 
< 5x10-11 mbar 
Pumping 
Turbopump,  
Ion Getter Pump and TSP 
Cryopump, Turbopump,  
Ion Getter Pump and TSP 
Cryopump, Turbopump,  
Ion Getter Pump and TSP 
Cryopump, Turbopump,  
Ion Getter Pump and TSP 
Cryopump, Turbopump,  
Ion Getter Pump and TSP 
Cryopump, Turbopump,  
Ion Getter Pump and TSP 
Cryopump, Turbopump,  
Ion Getter Pump and TSP 
Cryopump, Turbopump,  
Ion Getter Pump and TSP 
Substrate heater temperature 
Up to 1200°C 
Up to 1400°C 
Up to 1400°C 
Up to 1400°C 
Up to 1200°C 
Up to 1200°C 
Up to 1400°C 
Up to 1400°C 
Substrate size 
Up to 
2“ wafers 
Up to 
3“ diameter 
Up to 
4“ diameter 
Up to 
4“ diameter 
4”, 6” or 
Multi-wafer 3x2” 
6”, 8” 
2” 
6” or 
100x100mm 
Source ports 
9p (OD 2.75“) or 
8p (OD 4.5“) 
10p (OD 4.5“) 
12p 
8p plus 
2 e-beam 
12p 
10p 
10p 
12p 
Source types 
Effusion cells, 
E-beam evaporators, 
Sublimation, 
Valved cracker, 
Gas sources 
Effusion cells, 
E-beam evaporators, 
Sublimation, 
Valved cracker, 
Gas sources 
Effusion cells, 
E-beam evaporators, 
Sublimation, 
Valved cracker, 
Gas sources 
Effusion cells, 
E-beam evaporators, 
Sublimation, 
Valved cracker, 
Gas sources 
Effusion cells, 
E-beam evaporators, 
Sublimation, 
Valved cracker, 
Gas sources 
Effusion cells, 
E-beam evaporators, 
Sublimation, 
Valved cracker, 
Gas sources 
Effusion cells, 
E-beam evaporators, 
Sublimation, 
Valved cracker, 
Gas sources 
Effusion cells, 
E-beam evaporators, 
Sublimation, 
Valved cracker, 
Gas sources 
In-situ monitoring 
Ion Gauge, QCM, Pyrometer, RHEED, QMA 
Ion Gauge, QCM, Pyrometer, RHEED, QMA 
Ion Gauge, QCM, Pyrometer, RHEED, QMA 
Ion Gauge, QCM, Pyrometer, RHEED, QMA 
Ion Gauge, QCM, Pyrometer, RHEED, QMA 
Ion Gauge, QCM, Pyrometer, RHEED, QMA 
Ion Gauge, QCM, Pyrometer, RHEED, QMA 
Ion Gauge, QCM, Pyrometer, RHEED, QMA 
Sample transfer 
Manual 
Manual or 
semi-automatic 
Manual or 
semi-automatic 
Manual or 
semi-automatic 
Automated transfer 
Automated transfer 
Manual or 
semi-automatic 
Manual or 
semi-automatic 
Load lock 
6 substrates 
6 substrates 
6 substrates 
8 substrates 
10 substrates 
10 substrates 
6 substrates 
5~10 substrates 

 

300

400

500

500 EBV

600

600 EBV

O-400

Thin Film System

 

 OCTOPLUS 300

Mini III/V, II/VI, Topological Insulator or other material MBE System

Mini MBE system OCTOPLUS 300
  • Compact and versatile research MBE system with small footprint
  • Applications: II-VI, III-V, IV-IV, metals, magnetic materials, topological insulators, nanowire growth, oxides, organic materials
  • 9 source ports DN40CF (O.D. 2.75’’) or 8 source ports (2x DN63CF (O.D. 4.5’’), 6x DN40CF (O.D. 2.75’’))
  • Wide range of source options
  • Sample size : flag style 10 x 10 mm2, 1’’ or 2’’ wafer
  • UHV pumping system with base pressure < 5 x 10-11 mbar
  • Stainless steel LN2 cooling shroud
  • Low energy and LN2 consumption
  • In-situ monitoring capability
  • Strong support by MBE experts
 The OCTOPLUS 300 system is ideally suited for material deposition on small samples. It provides good access and easy operation and maintenance. The  chamber design of the OCTOPLUS 300 plus various state-of-the-art components allow layer by layer precise MBE growth.
Small flag style sample plate
 Outstanding features of the OCTOPLUS 300 are the high reliability and versatility of the system and its small footprint. These features make the OCTOPLUS 300 system particularly suited for applications in research and development. Nonetheless specific production processes are also covered.
 The standard version of the OCTOPLUS 300 comprises 8 source ports, two ports with 4.5 inch (DN63CF) and six ports with 2.75 inch (DN40CF) flange size. By using Source Clusters up to 10 sources can be integrated into the system. A rapid pump-down load lock chamber with a horizontally working transfer-rod system allows the user an easy substrate introduction without breaking the vacuum of the MBE chamber.

 


 OCTOPLUS 400

Compact III/V, II/VI or other material MBE System

 

  • Compact and versatile MBE system for R&D
  • Applications: III-V, II-VI or Oxide-MBE
  • Up to 10 source ports, various options including e-beam evaporators
  • Wide range of source options
  • Horizontal substrates up to 3''
  • UHV pumping system with base pressure < 5 x 10-11 mbar
  • Ease of use and maintenance
  • In-situ characterization capability
  • Strong support by MBE experts

 

 The OCTOPLUS 400 system is ideally suited for III-V, II-VI and other compound semiconductor material applications.The OCTOPLUS 400 system can be easily adapted to small wafer segments as well as to 1, 2 or 3 inch wafers. The field-proven vertical chamber design of the OCTOPLUS 400 plus various state-of-the-art components allow layer by layer precise MBE growth. 
MBE system OCTOPLUS 400

  Outstanding features of the OCTOPLUS 400 are the high reliability and versatility of the system and its compactness. These features make the OCTOPLUS 400 system particularly suited for applications in research and development. Nonetheless specific production processes are also covered.

 The standard version of the OCTOPLUS 400 comprises 8 source ports with 4.5 inch (DN63CF) flange size. Up to 10 source ports are possible in a custom designed version on request. A rapidly pump-down load lock chamber with a horizontal working transfer rod system allows easy substrate introduction without breaking the vacuum of the MBE chamber.

 

 

 OCTOPLUS 500 

III/V, II/VI and other materials MBE System

MBE system OCTOPLUS 500

 

  • State-of-the-art MBE system for research and production processes
  • Applications: III/V, II/VI and other heterostructures
  • 12 source ports
  • Wide range of source options, e.g. effusion cells, gas sources, manipulators
  • Substrate sizes 2", 3" or 4"; face-down wafer geometry 
  • Strong UHV pumping system
  • LN2 cooling shroud
  • In-situ characterization capability
  • Strong support by MBE experts
 The OCTOPLUS 500 system has been developed for the growth of high quality III-V heterostructures on 4 inch Si substrates. Optionally the system can be upgraded to 6 inch substrate size. The MBE chamber is equipped with up to 12 effusion cells or gas injectors for deposition or surface treatment.
 The substrate manipulator applies to pyrolytic graphite or alternatively tungsten or tantalum heaters. The OCTOPLUS 500 MBE system is field-proven and ideally suited for III/V, II/VI and other heterostructure growth for applications in research and production processes.
 Outstanding features of the OCTOPLUS 500 are the high reliability and versatility of the system.
 The standard version of the OCTOPLUS 500 comprises 12 radially arranged source ports, 3 further source ports can be added on request. A rapid pump-down load lock chamber with a horizontal working transfer rod system or a central transfer module allows easy substrate introduction without breaking the vacuum of the MBE chamber.

 

 

 Thin Film Systems

Octoplus 500 for PVD Applications

Deposition chamber of a CuInGaSe R&D System
  • State-of-the-art MBE system, optimized for PVD applications
  • Up to 12 source ports
  • Large capacity sources for CIGS, Kesterite or CdTe deposition
  • Fast ramping source for sharp composition profile deposition on request
  • Substrate size up to 6 inch, or 100mm x 100 mm
  • Turbo molecular pumped growth chamber with reactive material trap
  • Base pressure in 10-10 mbar range, lower on request
  • Uniformity of layers  better ±1% in thickness and composition
  • Software allows fully automated layer by layer growth with growth recipes, cell ramping  data logging. etc.
  • Fast entry load-lock with 5-10 samples in a lift-magazine
  • The loadlock can be pumped down <10-6 mbar in less than 25min. Base pressure is in the 10-9mbar range
  • This PVD system is well optimized and has shown excellent results in the field

 

The Thin Film deposition system is based on our OCTOPLUS 500 chamber. It is a versatile and very thoroughly designed MBE system, ideally suited compound semiconductor material deposition.
Beside the installation we also offer, extensive testing and field training by PhD experts at customers site. For example, it also includes the deposition of CIGS layers  using 3-stage process on glass substrate with Moly layer.
For the case of CIGS systems we provide special large capacity Se resistant effusion cells and valved cracker sources for Selenium and Sulfer. The substrate manipulator allows well controlled substrate heating and manipulation up to 6 inch diameter or 10cm x 10cm size. The proven MBE software EpiSoft controls all shutters, cell- and manipulator temperatures, substrate rotation, the chamber pressure and other features. Excellent operation reproducibility and safety is guaranteed.
The standard version of the OCTOPLUS 500 comprises up to 10 source ports with 4.5 inch (DN 63) and 6inch, (DN 100) flange size. Bellow-free soft-acting linear shutters are offered with very long life-time. The shutters provide 0.2sec open and closing time.A rapidly pump-down load lock chamber with a horizontal working transfer rod system allows easy substrate introduction without breaking the vacuum of the MBE chamber.

We are happy to discuss your MBE system specifications and give competent advice for your application.
The OCTOPLUS 500 is in use in leading laboratories. Record CIGS solar cell efficiencies have been demonstrated with this system by our customers. On demand we transmit a detailed list of references. Please contact our sales department for further questions and specification information.
View into the deposition system,
wafer and port to the deposition chamber are visible
PEZ-W 63-160-60-DF,
Selenium resistant deposition source
for copper, indium and gallium

 

 

 OCTOPLUS 500 EVB

Si/SiGe, Metals, Magnetics, Oxides, Topological Insulators MBE System

 

  • State-of-the-art SiGe and other materials MBE system
  • Ideally suited for Si/SiGe epitaxial growth or metal deposition
  • Up to 10 source ports: 2 ports DN250CF (O.D. 12"), 8 ports DN63CF (O.D. 4.5") and DN100CF (O.D. 6")
  • Large capacity e-beam evaporators, wide range of effusion cells and gas sources
  • Substrate sizes 2", 3", 4" or multi-wafer size
  • Strong UHV pumping system (TSP, ion getter, cryo and/or turbo pump)
  • LN2 cooling shroud
  • In-situ characterization capability
  • Strong support by MBE experts
MBE system OCTOPLUS 500 EBV
The OCTOPLUS 500 EBV system has been developed for the growth of high quality Si/SiGe heterostructures on 4 inch Si substrates. Optionally the system can be upgraded to 6 inch substrate size. The MBE chamber is equipped with two electron beam evaporating guns and up to 8 effusion cells or gas injectors for deposition or surface treatment.
Among the wide range of materials covered by products of Dr. Eberl MBE-Komponenten GmbH we have very detailed knowledge in the group IV elements C, Si and Ge MBE.
Based on many years of active research experience in the field of growth and doping applications with these elements our team develops and manufactures the OCTOPLUS 500 EBV system and all essential components. Each product is assembled and carefully tested in-house.
The beam flux produced by the electron guns can be monitored by cross-beam quadrupole mass spectrometers on the elements employed. The substrate manipulator applies pyrolytic graphite or alternatively tungsten or tantalum heaters. The OCTOPLUS 500 EBV MBE system is field-proven and ideally suited for metals, magnetics, oxides, topological insulators and Si/SiGe heterostructure growth in research and production processes.
Outstanding features of the OCTOPLUS 500 EBV are the high reliability and versatility of the system.
The standard version of the OCTOPLUS 500 EBV comprises 10 radially arranged source ports, from which we recommend 8 ports to be used for effusion cells, sublimation sources or comparable components. Two large ports DN250CF are provided for e-beam evaporation guns. The e-beam evaporators can also be a multi-pocket version EBVM. A rapid pump-down load lock chamber with a horizontal working transfer rod system or a central transfer module allows easy substrate introduction without breaking the vacuum of the MBE chamber.

 

 

 OCTOPLUS 600

III/V, II/VI and other materials MBE System

MBE system OCTOPLUS 600
  • State-of-the-art MBE system for research and production

  • Applications: III/V, II/VI or other material heterostructures

  • 12 source ports

  • Wide range of source options, e.g. effusion cells, valved sources etc.

  • Substrate sizes 4", 6" or 3 x 2"; face-down wafer geometry

  • Automated wafer transfer

  • Strong UHV pumping system

  • LN2 cooling shroud

  • In-situ characterization capability

  • Strong support by MBE experts

The OCTOPLUS 600 system has been developed for the growth of high quality III-V heterostructures on multi wafer 3x2 inch or single wafer 4 inch or 6 inch substrate. The MBE chamber is equipped with up to 12 effusion cells and valved crackers for deposition. The substrate manipulator applies to pyrolytic graphite or alternatively tungsten or tantalum heaters. The OCTOPLUS 600 MBE system is field-proven and ideally suited for III/V, II/VI and other heterostructure growth for applications in research and production processes.
Outstanding features of the OCTOPLUS 600 are the high reliability and versatility of the system.
The standard version of the OCTOPLUS 600 comprises 12 radially arranged source ports, 3 further source ports can be added on request. A rapid pump-down load lock chamber with wafer magazine, a heated station and the fully automated central transfer allow easy substrate introduction and handling.
Fully automated wafer transfer by central handling arm.

 

 

 OCTOPLUS 600 EBV

Si/SiGe(Sn) epitaxial growth or metal deposition MBE System

 

  • Ideally suited for Si/SiGe(Sn) epitaxial growth or metal deposition
  • Up to 12 source ports: 2 ports DN250CF (O.D. 12") / DN300CF (O.D. 14"), and 10 ports DN100CF (O.D. 6")
  • Very large capacity e-beam evaporators (Si, Ge), up to 1000 cm3 pocket volume
  • Wide range of effusion cells and other sources
  • Substrate sizes 6" or 8"
  • Strong UHV pumping system with base pressure of 10-11 mbar range, depending on pump configuration
  • Isotopically purified materials available on request (e.g. up to 99.99% 28Si)
  • Automated central wafer transfer
  • Support by experienced MBE experts
MBE system OCTOPLUS 600 EBV
The OCTOPLUS 600 EBV system has been developed for the growth of high quality Si/SiGe heterostructures on 6 inch Si substrates. Optionally the system can be upgraded to 8 inch wafer size. The MBE chamber is equipped with two electron beam evaporating guns and up to 10 other sources, like effusion cells or gas injectors for deposition or surface treatment.
Among the wide range of materials covered by products of Dr. Eberl MBE-Komponenten GmbH we have very detailed knowledge in the group IV elements C, Si, Ge and Sn MBE.
Based on many years of active research experience in the field of growth and doping applications with these elements our team develops and manufactures the OCTOPLUS 600 EBV system and all essential components. Each product is assembled and carefully tested in-house.
The beam flux produced by the electron guns can be monitored by cross-beam quadrupole mass spectrometers on the elements employed. The substrate manipulator applies pyrolytic graphite or alternatively tungsten or tantalum heaters. The OCTOPLUS 600 EBV MBE system is field-proven and ideally suited for metals, magnetics, oxides, topological insulators and Si/SiGe heterostructure growth in research and production processes.
Fully automated wafer transfer by central handling arm.
 

 

 Outstanding features of the OCTOPLUS 600 EBV are the high reliability and versatility of the system, with automated central wafer transfer.
 The OCTOPLUS 600 EBV comprises 10 radially arranged source ports, and two big source ports for large capacity e-beam evaporators with a capacity of up 160 cm3. Up to 1000 cm3 capacity is offered on request. Layer SiGe(Sn) uniformity of better +/- 1% is typically achieved. Specially developed doping sources for efficient p- and n-type doping are available.

 

 OCTOPLUS-O 400

Oxide MBE System

MBE system OCTOPLUS-O 400
  • Oxide MBE System with efficient differential pumping

  • Applications for many oxide and metal materials

  • 9 MBE source ports DN63CF (O.D. 4.5"), extendible to 12 ports

  • Wide range of source options; compatible to multi-pocket e-beam evaporation

  • Small samples or wafer sizes up to 2"

  • Strong differential pumping

  • Ozone-resistant SiC substrate heater or CO2 laser substrate heating

  • Ozone injection close to substrate

  • In-situ characterization capability

  • Strong support by MBE experts

 

 The OCTOPLUS-O 400 is very thoroughly designed for oxide layer deposition. The unique design with effective differential pumping allows depositing oxide layers in high Oxygen or Ozone partial pressure without strong degeneration of the hot sources.  
The OCTOPLUS-O 400 system can be easily adapted to small wafer segments as well as to 2 inch wafers.
  The field-proven vertical chamber design of the OCTOPLUS-O 400 plus various state-of-the-art components allow layer by layer precise MBE growth.
Outstanding features of the OCTOPLUS-O 400 are the special design, high reliability and versatility of the system and its compactness. These features make our systems particularly suited for applications in research and development. Nonetheless specific production processes are also covered.
The standard version of the OCTOPLUS-O 400 comprises 9 source ports 4.5 inch (DN63CF) flange size. A rapid pump-down load lock chamber with a horizontal working transfer rod system allows easy substrate introduction without breaking the vacuum of the MBE chamber.

We provide different kinds of effusion cells, valved cracker sources, gas sources and substrate manipulators according to customers' requirements.

CO2 laser heating allows substrate heating up to more than 1400°C.
 A backside metal coating of the substrate is not needed, since the CO2 laser light is strongly absorbed by various oxide substrates.
 Please see corresponding paper.

 A well-manageable in-situ characterization is obtained by using quartz micro-balance, RHEED systems or quadrupole mass analyzers (QMA).

 

 

 Organic Deposition System

 

  • Compact system design 
  • Turbo molecular pumped growth chamber
  • Up to 8 sources for organic evaporators
  • Substrate size 1 inch up to 4 inch
  • Precise temperature controlled low temperature evaporation sources
  • Fast ramping
  • Uniformity of layers better +/-1% in thickness and composition
  • Software allows fully automated layer by layer growth with growth recipes, cell ramping  data logging. etc.
  • Fast entry load-lock with 5-10 samples in a lift-magazine

 

 

 Based on proven concepts in UHV and MBE system design we offer a compact UHV deposition system for organic material growth. 
Deposition chamber of an Organic Deposition System
 The UHV system allows the evaporation of various organic materials frequently used for OLED or organic solar cell fabrication on substrates up to 4 inch size. The system can be equipped with a separately pumped fast-entry load lock chamber.
 We offer specially developed precise temperature controlled low temperature sources based on our patterned OME design (see chapter "Organic Evaporators"). This guarantees high quality organic layer deposition. For standard vacuum equipment like vacuum pumps, gate valves, transfer rods or feedthroughs we choose qualified OEM partners to guarantee your system specifications.
 A wide range of in-situ characterization tools can be integrated into the systems. We offer fully equipped systems including all cables, power supplies, controllers and additional equipment. Software/hardware control systems and MBE growth process software is also available.
 Our team has many years of active research experience and long experience in manufacturing of MBE components. We are happy to discuss your system specifications and give competent advice for your application. Please contact us for more information and for information on new projects.

 

APPLICATION

 Our MBE systems and components are used in the preparation of compound semiconductor devices such as HBTs, MESFETs, HEMTs as well as photo detectors and GaAs based laser diodes.


 

 Large capacity sources are available for Cu, Ga, In, NaF and Se evaporation in large scale production of thin film solar cells. We create turn-key R&D systems and components for the growth of CIGS, CZTS and CdTe solar cell layers.


 

 Our products are frequently employed for the preparation of nano structures like self-assembling dots, nano wires and for general small sample preparation.


 

 Our MBE systems enable the preparation of quantum materials. Atomic layer precise deposition of metals, semiconductors and superconductors allow the fabrication of qubits, which may become essential for future quantum computers.


 

 2D materials consist of a single layer of atoms or molecules. Examples are Graphene, Silicene, Borophene Phosphorene Tungsten and Molybdenum diselenide. The layers are prepared by 2D van der Waals heterostructures.


 

 Our MBE systems and components make it possible to prepare solid state devices to study spin-dependent electron transport phenomena and giant magneto-resistance effects. Magnetic tunnel junctions can be prepared with our Octoplus MBE systems.


 

 Our MBE systems make it possible to grow high quality topological insulators of different material types, e.g. HgTe, Bi2Se3  Bi2Te3, Sb2Te3, as well as Heusler alloys, oxides, and many others.    


 

 Electron beam evaporation as well as oxygen resistant thermal evaporation sources and heaters are used for vacuum deposition of oxide and nitride layers.


 

 We manufacture organic material deposition systems and components for the preparation of OLED organic solar cells and other organic thin films.


 

 Applications in this category are, for example, Au or Ag deposition for semiconductor device contacts and formation of Al contact layers for OLEDs. Numerous other metals are deposited by using our e-beam evaporators and high temperature sources.

Simulation

“Particle Ping-Pong” in the Monte Carlo particle tracing concept and example for the resulting beam flux distribution on the substrate

General Information

Introduction to our Monte Carlo Beam Flux Simulation

Simulation of the material evaporation and deposition in vacuum is usually based on the fundamental physical laws for the evaporation geometry (1/r2-Law) and Lambert’s Law, which explain the angular flux distribution from and to a surface element. These allow the application of different concepts to calculate the beam distribution of evaporation sources and therefore the deposition of material on a substrate.

 

Cross-section of an MBE system. Multiple radially arranged effusion sources are used to deposit materials onto a rotating substrate.

 

R&D / MBE Systems

Monte Carlo simulation of thin film deposition in R&D type physical vapor deposition and MBE systems

Cross-section of an MBE system. Multiple radially arranged effusion sources are used to deposit materials onto a rotating substrate.

Geometry of substrate and evaporation source (L)
 Calculated 2D flux distribution (Right)


 

Figure 1: Simulation of the flux distribution on a stationary substrate, assuming a single effusion cell using an insert for beam shaping. The black rectangle represents the deposition window of 125cmx300cm.
Figure 2: Combined flux distribution on the substrate by two symmetrically aligned effusion cells.

 

Flat Panel Systems

Monte Carlo simulation of thin film deposition for industrial continuously running-through flat panel coating systems

 

Monte Carlo simulation allows to calculate the flux distribution of various types of evaporation sources. It provides information on the resulting flow rate distribution, material composition on the substrate, and material efficiency, thus allowing to optimize source design, source arrangement and depositon system layout.

An example for large area industrial flat panel deposition is illustrated schematically in the figure above. A pair of point sources (left part) or alternatively a linear evaporator (right part) is applied for the material evaporation. The source material or, in a co-deposition process, various source materials are deposited onto continuously running-through flat panels.

 

Schematic illustration of the deposition process with 3 pairs of point sources depositing materials onto a moving roll.

 

Roll-to-Roll Systems

Simulation of the evaporation from three pairs of point sources like for example Cu, Ga and In in a moving roll-to-roll process

 

  • Why MC-Simulation?
    It provides important information while saving time and money
     

  • MC-Simulation allows the optimization of
    - source design
    - source arrangement
    - deposition chamber layout
     

  • It provides information about
    - layer uniformity
    - material efficiency
    - layer composition

  • For single material deposition and co-evaporation