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MBE, Molecular Beam Epitaxy System

Dr. Eberl MBE-Komponenten GmbH, Germany

Trusted expertise since 1990

35 years of development and manufacture of complex systems and components for multiple tasks

OCTOPLUS 200 - MBE system for small samples (10x10 mm²) with up to 6 ports for effusion cells

Compact mini MBE system for surface science samples

Compact and versatile research MBE system with ultra-small footprint
  • Applications: heat novel materials research and UHV surface science
  • 6 source ports DN40CF (O.D. 2.75’’)
  • Wide range of source options
  • Sample size : flag style scientific sample plate 10x10 mm2
  • Effective UHV pumping system
  • Water cooled chamber body, no LN2 infrastructure needed
  • Low energy consumption, economic operation, minimal site requirements
  • In-situ monitoring capability
  • Professional support by PhD MBE experts

 

General Information

Small flag style sample plate

The OCTOPLUS 200 system is ideally suited for material deposition on small samples. It provides good access and easy operation and maintenance. The chamber design of the OCTOPLUS 200 plus various state-of-the-art components allow layer by layer precise MBE growth.

Outstanding features of the OCTOPLUS 200 are the high reliability and versatility of the system and its small footprint. These features make the OCTOPLUS 200 system particularly suited for applications in research and development. Its ultra compact footprint allows it to be integrated in tight laboratory spaces with other existing in-situ UHV surface analysis equipment.

The standard version of the OCTOPLUS 200 comprises six ports with DN40CF (O.D. 2.75’’) flange size. By using Source Clusters many more source materials can be integrated into the system. A rapid pump-down load lock chamber with a horizontally working transfer-rod system allows the user an easy substrate introduction without breaking the vacuum of the MBE chamber. The transfer system can be easily adapted to integrate with other existing surface analysis equipment for fundamental research, e.g. at synchrotron facilities.

We provide different kinds of effusion cells, valved cracker sources, gas sources and substrate manipulators according to all our customers’ requirements. A well-manageable in-situ characterization is obtained by using beam-flux-gauges, pyrometers, RHEED systems or quadrupole mass analyzers (QMA).

We are happy to discuss your MBE system specifications and give competent advice for your application. Do not hesitate to contact us.

 

Options for OCTOPLUS 200

  • Additional load lock or peparation chambers
  • Wafer transfer system
  • Effusion cells, source clusters, electron beam evaporators, cracker and valved cracker sources, manipulators, power supplies and control units
  • Pumping system (ion getter pumps, turbopumps, cryopumps etc.)
  • Control system
  • In-situ characterization tools, e.g. ion gauge, Quartz Crystal Microbalance (QCM), pyrometer, RHEED, QMA

 

Technical Data

Size of deposition chamber

200 mm I.D.

Base pressure

< 2x10-10 mbar

Pumping

turbopump, ion getter pump and TSP

Cooling Shroud

water cooling

Substrate heater temperature

up to 1200°C, continuous substrate rotation

Substate size

scientific sample plates (10x10 mm2)

Bakeout temperature

up to 150°C

Source ports

6 ports DN40CF

Source types

effusion cells, mini e-beam evaporators, sublimation sources, valved cracker sources, gas sources, source clusters

Shutters

soft-acting rotary shutters

In-situ monitoring

ion gauge, QCM, pyrometer, RHEED, QMA

Sample transfer

linear transfer rod (manual)

Load lock

magazine with 10 flag-shaped scientific substrates turbo-pumped

MBE control software

Tiny Tusker

Service

system installation and acceptance testing

MBE training

by MBE experts

 

Examples for applications and corresponding sources

 

Effusion Cells
WEZ I NTEZ I OME I HTEZ

Sublimation Sources
SUKO I SUSI I HTS I DECO

Valved / Cracker Sources
VTCC I TCC I VSS

Plasma Sources
FMP

III/V

Ga, In, Al

C, Si doping

As, P, Sb

II/VI

Zn, Cd, Be

 

S, Se, Te

N-doping

IV

Ge, Sn, Pb

B, P, Sb doping

 

 

GaN

Ga, In, Al

 

 

N

Metals

Cu, Al, Ni, Co, Pb...

 

 

 

Topological Insulators Thermoelectrics

Ge, Sn, Te, Bi, GeSb

 

Se, Te, Sb, alkali metals

 

Oxides

Fe, Ni, Mn, Bi, Eu,
Ga, ...

 

 

O

Thin Film Solar Cells

Cu, Ga, In, Zn, NaF,
Fe, Sn

 

S, Se

 


 

 

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