메뉴 건너뛰기

Sputtering Targets

Different Shapes of Sputtering Targets

(주)연진에스텍은 Planar (Flat) TargetRotary (Cylindrical) Target, Circular (Disc)TargetRing Target 등 대부분의 증착 공정에 부합하는 다양한 형태의 스퍼터링 타겟을 제공하며, 특이한 요청 시 타겟 크기의 커스터마이즈가 가능합니다.

 

Key Features

  • High Purity & Performance: 일관된 증착 품질과 오염을 줄이도록 가공합니다.
  • Material Variety: 다양한 응용 분야의 요구 사항에 맞게 순수 금속, 합금, 세라믹 및 화합물로 제공됩니다.
  • Custom Manufacturing: 특정 시스템의 필요요구 사항에 맞게 크기와 형태, 조성을 맞춤화했습니다.
  • Precision Design: 반복 가능하고 균일한 박막 결과를 위해 엄격한 허용 오차로 제조되었습니다.
  • Flexible Supply Chain: 최고의 제조업체와 강력한 파트너십을 통해 일관된 품질과 on-time 납품을 보장합니다.

 


OXIDE TARGET

Silicon (Si) Sputtering Targets


 

Silicon (Si) Sputtering

Targets Description

 

Silicon (Si) Sputtering Target refers to a type of target material used in sputtering processes. Sputtering is a physical vapor deposition technique commonly used in the semiconductor industry to deposit thin films of materials onto a substrate.

Undoped Silicon (Si) Sputtering Targets are made of pure silicon without any intentional dopants or impurities. They provide a high-purity silicon source for deposition processes. These targets are typically used in applications where a pure silicon film is required, such as in the fabrication of integrated circuits, solar cells, optical coatings, and other electronic and semiconductor devices.

Silicon is a chemical element that originated from the Latin ‘silex’ or ‘silicis’, meaning flint. It was first mentioned in 1824 and observed by J. Berzelius. The isolation was later accomplished and announced by J. Berzelius. “Si” is the canonical chemical symbol of silicon. Its atomic number in the periodic table of elements is 14 with a location at Period 3 and Group 14, belonging to the p-block. The relative atomic mass of silicon is 28.0855(3) Dalton, the number in the brackets indicating the uncertainty.

 

Silicon (Si) Sputtering Targets Specifications

Dopant

Undoped

Compound Formula

Si

Molecular Weight

28.09

Appearance

Dark Gray with a Bluish Tinge, Semi-Metallic

Melting Point

1410℃

Density

2.329 g/cm3

Available Sizes

Dia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″

 

Thick: 0.125″, 0.250″

 

Silicon (Si) Sputtering Targets Handling Notes

  1. Indium bonding is recommended for Silicon (Si) Sputtering Target, due to some of its characteristics not amenable to sputtering like brittleness, low thermal conductivity, etc.
  2. This material has a low thermal conductivity, and is susceptible to thermal shock.

 

Silicon (Si) Sputtering Targets Application

Undoped Silicon (Si) Sputtering Target is typically used in applications where a pure silicon film is required, such as in the fabrication of integrated circuits, solar cells, optical coatings, and other electronic and semiconductor devices.

 

Silicon (Si) Sputtering Targets Packaging

Our Silicon (Si) Sputtering Targets are carefully handled during storage and transportation to preserve the quality of our products in their original condition.

 

 

 

스퍼터링 타겟의 다른 글

문의
하기