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MBE, Molecular Beam Epitaxy System

Dr. Eberl MBE-Komponenten GmbH, Germany

Trusted expertise since 1990

35 years of development and manufacture of complex systems and components for multiple tasks

Substrate Manipulation

Substrate Manipulation

 

SH, Substrate Manipulators / Deposition Stages

SH substrate manipulators are used in standard III-V MBE, GaN MBE, SiC growth and SiGe MBE. Heaters made from tungsten, tantalum, graphite and SiC are available.

SH 200-4S25-S Substrate Manipulator on DN200CF (O.D. 10”) flange for 4” wafers; with Silicon-Carbide heater, 25 mm linear travel for substrate transfer and integrated main shutter
  • Uniform heating of substrates from small samples to 6 inch wafer diameter
  • Wafer temperatures up to 1200°C
  • Heater materials: Tungsten, Tantalum, Graphite, Silicon Carbide, Platinum, PBN encapsulated
  • Special heaters for oxygen and reactive gas atmosphere
  • Water-cooled ceramic bearings for continuous rotation
  • Full adaptability to sample transfer by user-specific linear travel and custom sample holders
  • Option for masked deposition:
  • transferable wafer mask stage

 

SH-O, Oxygen Resistant Substrate Manipulator / Heated Station

Using SiC or noble metal heaters, MBE-Komponenten offers substrate manipulators and heated stations that are resistant to oxygen or other corroding atmospheres.

SH-O 150-2PT25-S, substrate manipulator on DN150 CF (O.D. 8") mounting flange; for a 2 inch wafer, with noble-metal-alloy heater and 25 mm linear travel for substrate transfer; with integrated main shutter

 
  • Oxygen resistance option of the SH substrate manipulator
  • Substrate temperatures up to 700°C with Ni-alloy heater; up to 900°C with noble-metal-alloy heater
  • up to 900°C with SiC heater depending on oxygen partial pressure
  • Pressure range from UHV up few mbar oxygen
  • Water cooled ceramic bearings for continuous rotation
  • Substrate sizes up to 6 inch

 

WH, Wafer Heater / Sample Heater / Heated Stages

The wafer heaters or heated stations - WH - are suited for all substrate heating applications where the full functionality of a substrate manipulator is not required.

WH 100-2T, wafer heater on DN100 CF (O.D. 6") flange

 
  • Tungsten, tantalum, SiC or graphite heaters
  • Wafer temperatures up to 1200°C
  • Clean operation and high reliability
  • Substrate sizes from 1" up to 6"
  • Oxygen resistance and customized solutions possible

WH40, Loadlock Heater

Main purpose of the Loadlock Heater WH 40 is the controlled heating of both chamber walls and substrates within a loadlock under ultra-high vacuum conditions.

WH40 Loadlock heater

 
  • Tantalum or Tungsten heater
  • Wafer or chamber temperatures according to setup (~400°C)
  • Clean operation and high reliability
  • Suitable for substrate sizes from 1" to 6"
  • Customized solutions possible


 


 

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