Doping Cells
DEZ Doping Effusion Cells
- Compatible with all MBE systems
- Conical shaped crucibles with crucible capacities 2, 5, and 12 cm³
- Most effective Ta-wire heating system
- Large flux distribution providing excellent homogeneities
- High reliability and long lifetime
- Optional: on cell flange integrated shutter
DDS Dual Doping Source
- Cluster sources increase the capacity of UHV systems
- Customized designs with all kind of effusion cells
- Compact and intelligent cell design
- Various crucibles available
- Solutions with integrated cooling shrouds and shutters
DECO-D Phosphorus Doping Source
- 1020/cm3 n-type doping in Si/SiGe MBE
- P-doping through GaP decomposition
- High P incorporation rate
- Minimum memory effects
- Easy to install and to operate
- Sharp doping profiles
- Precise and fast flux control
SUSI-D Silicon Sublimation Doping Source
- Thermal sublimation of silicon from high purity intrinsic or highly doped Si filament
- Excellent growth of thin silicon layers
- Compatible with most MBE systems
- Water-cooled electrical contacts
- Inner filament shielding with pure silicon parts
- No ceramic parts in the hot zone
SUKO-D Carbon Doping Source
- High-mobility GaAs p-type doping
- Fast and precise flux control
- Ultra-high purity pyrolytic graphite (PG) filament
- Water-cooled electrical contacts
- Inner filament shielding with pure pyrolytic graphite parts
- No ceramic or metal parts in the hot zone
EBVV-B Electron Beam Boron Doping Source EBVV-B
- Up to 1021/ccm Boron doping in Si-MBE
- Evaporation of elemental Boron or Si-B alloy in vertical e-beam evaporator
- Small dimensions; can be used in DN63CF
- (O.D. 4.5“) effusion cell ports; hearth volume 5 cm³
- Long filament lifetime and easy maintenance
- 270° beam deflection
- High frequency x-y-beam deflection system
- Silicon shielding parts for use in SiGe-MBE
Select doping cell by dopant material:
|
Bulkmaterial |
Dopant |
Type |
Source |
Comment |
|---|---|---|---|---|
|
GaAs / AlGaAs |
Si |
n |
|
|
|
|
Si |
n |
high mobility doping, fast switching |
|
|
|
Te |
n |
GaTe source material, T=700°C -> 1019cm-3 |
|
|
|
Be |
p |
|
|
|
|
C |
p |
high mobility p-type doping |
|
|
Si / SiGe |
Sb |
n |
segregation effect |
|
|
|
As |
n |
high segregation effect in MBE |
|
|
|
P |
n |
GaP source material, T=700°C -> 1019cm-3 |
|
|
|
B |
p |
|
|
|
|
B |
p |
extremely high Boron doping levels |
|
|
|
Ga |
p |
|
|
|
|
Al |
p |
segregates in MBE |
|
|
|
Er |
opt. |
used for light emission |
|
|
GaN / GaInN |
Si |
n |
|
|
|
|
Si |
n |
long filament lifetime / Si flux option |
|
|
|
Mg |
p |
|
|
|
|
Zn |
p |
high activation energy |
|
|
GaP / GaAsP |
S |
n |
OME, valved source |
please contact us |
|
|
Te |
n |
use GaTe as source material |
|
|
|
Zn |
p |
|
|
|
SiC |
N |
n |
plasma source |
please contact us |
|
|
Al |
p |
|
|
|
ZnO |
B |
n |
|
|
|
|
N |
p |
plasma source |
please contact us |
|
ZnSe |
I |
n |
valved source |
valved source / please contact us |
|
|
ZnCl2 |
n |
gas injector |
valved source / please contact us |
|
|
N |
p |
plasma source |
please contact us |
|
CdTe |
Al |
n |
|
|
|
|
Cu |
p |
|
|
|
|
Sb |
p |
|
|
|
Other |
Fe |
|
|
|
|
|
Cr |
|
|
|
|
|
Cu |
|
|
