Cobalt Iron Boron (Co/Fe/B) Sputtering

Target Description

Cobalt Iron Boron (Co/Fe/B) Sputtering Target is made by combining cobalt, iron, and boron in the desired ratio and then compacting and sintering the mixture into a solid target form. The target is then mounted inside a sputtering system, where it is bombarded with high-energy ions to release atoms that deposit onto the substrate.

Sputtering is a process used in the deposition of thin films where atoms from a target material are ejected onto a substrate to form a film. In the case of CoFeB sputtering target, it is used to create thin film magnetic devices like magnetic tunnel junctions (MTJs), which are essential components in spintronics and magnetic storage devices.

Cobalt Iron Boron (Co/Fe/B) Sputtering Target Specifications

Cobalt Iron Boron (Co/Fe/B) Sputtering Target Handling Notes

1. Indium bonding is recommended for the Cobalt Iron Boron Target, due to some of its characteristics not amenable to sputtering like brittleness, low thermal conductivity, etc.
2. This material has a low thermal conductivity, and is susceptible to thermal shock.

Cobalt Iron Boron (Co/Fe/B) Sputtering Target Application

Cobalt Iron Boron Sputter Target is commonly used for applications such as optical coatings, electronic devices, energy storage, and catalysts. The precise composition and manufacturing of the sputtering target ensure a uniform and controlled deposition process, resulting in high-quality thin films with desired properties.

Cobalt Iron Boron (Co/Fe/B) Sputtering Target Packaging

Our Co/Fe/B Sputtering Targets are carefully handled during storage and transportation to preserve the quality of our products in their original condition.