State-of-the-art MBE system for silicon wafer-based epitaxy
- Applications: Epitaxy on silicon substrates 300 mm compatible with 300 mm process line
- Si/SiGe Epitaxy, oxide on 300mm silicon (e.g. STO/BTO/LMO)
- Smaller footprint, smarter design: optimized deposition geometry enables up to 50% more material output than conventional 300 mm wafer systems.
- Material-efficient deposition geometry allows to grow nominally 1.3 mm silicon epilayer from a 2.3 kg silicon e-beam charge
- Wide range of source options, e.g. effusion cells, valved cracker sources, metalorganic sources for hybrid epitaxy, etc.
- Fully automated wafer handling
- LN2 cooling shroud (can also be used with water-based coolant) and high-performance UHV pumping system
- In-situ characterization capability, customizable to your needs
- Professional support by PhD MBE experts
General Information
The OCTOPLUS 1000 sets the standard for efficient, reproducible MBE growth of SiGe compounds and advanced heterostructures in 300mm silicon wafer configuration. With large capacity e-beam evaporators and DN125CF source flanges, the system offers exceptional flexibility for complex material designs.
Tailored substrate manipulators with a wide range of heater options ensure precise temperature control, perfectly adapted to your process needs. Proven in real‑world applications, the OCTOPLUS 1000 combines reliability, scalability, and performance - making it the ideal choice for pioneering research and high‑value production.
High reliability and versatility are outstanding features of the OCTOPLUS 1000 system. The OCTOPLUS 1000 can accept up to four electron beam evaporators and multiple effusion cells.
A rapid pump-down load lock chamber with wafer magazine, a heated station and the fully automated central transfer allows easy substrate introduction and handling.
Options for OCTOPLUS 1000
- Additional load-lock, heated station, or buffer chambers
- Wide range of components, e.g., effusion cells, e-beam-evaporators, sublimation sources, valved cracker sources, gas sources, manipulators
- Software/hardware control system
- Pumping system (cryopump, turbo, ion pump)
- In-situ monitoring tools, e.g. RHEED, BFM, quartz microbalance, pyrometer, band-edge thermometry, ellipsometry
Technical Data
|
Size of deposition chamber |
1000 mm I.D. |
|
Base pressure |
< 5x10-11 mbar |
|
Pumping |
TSP, ion getter pump, cryopump and/or turbopump |
|
Cooling Shroud |
LN2 or other cooling liquid on request |
|
Substrate heater temperature |
>1000°C, suitable for deoxidizing 300mm Silicon wafers |
|
Substate size |
300mm silicon wafer or other substrates with adapter |
|
Bakeout temperature |
up to 200°C |
|
Source ports |
Up to DN300CF source ports for horizontal 1000cc e-beam evaporators |
|
Source types |
effusion cells, e-beam evaporators, valved crackers, sublimation and gas sources |
|
Shutters |
soft-acting linear shutters with low flux transient |
|
In-situ monitoring |
RHEED, BFM, QCM, band-edge thermometry, ellipsometry, QMA, EIES, QMS, … |
|
Sample transfer |
automated transfer with wafer face-down geometry |
|
Load lock |
magazine with 10 substrates, turbo-pumped |
|
MBE control software |
Tiny Tusker |
