Gallium Nitride Sputtering Targets

Description

Gallium Nitride Sputtering Targets consist of a solid piece or disk made primarily of gallium nitride (GaN), which is a compound semiconductor material. GaN is known for its wide bandgap, high thermal conductivity, and good electrical properties, making it suitable for applications in various electronic devices, such as LEDs, power electronics, and wireless communication systems.

Gallium is a chemical element originated from France (with the Latin name Gallia). It was first mentioned in 1875 and observed by P. E. L. de Boisbaudran. The isolation was later accomplished and announced by P. E. L. de Boisbaudran. “Ga” is the canonical chemical symbol of gallium. Its atomic number in the periodic table of elements is 31 with location at Period 4 and Group 13, belonging to the p-block. The relative atomic mass of gallium is 69.723(1) Dalton, the number in the brackets indicating the uncertainty.

Gallium Nitride Sputtering Targets Specifications

Gallium Nitride Sputtering Targets Handling Notes

1. Indium bonding is recommended for Gallium Nitride Sputtering Target, due to some of its characteristics not amenable to sputtering like brittleness, low thermal conductivity, etc.
2. This material has a low thermal conductivity, and is susceptible to thermal shock.

Gallium Nitride Sputtering Targets Application

Gallium Nitride Sputtering Target is known for its wide bandgap, high thermal conductivity, and good electrical properties, making it suitable for applications in various electronic devices, such as LEDs, power electronics, and wireless communication systems.

Gallium Nitride Sputtering Targets Packaging

Our Gallium Nitride Sputtering Targets are carefully handled during storage and transportation to preserve the quality of our products in their original condition.