Tin Arsenide Sputtering Target

Description

Tin Arsenide Sputtering Targets, meticulously crafted by Stanford Advanced Materials (SAM), are derived from high-purity Tin Arsenide (SnAs) through precise processing, ensuring fine quality. These targets exhibit exceptional properties, making them suitable for deployment in chemical vapor deposition (CVD) and physical vapor deposition (PVD) processes. The resulting thin films demonstrate excellent performance.

Tin Arsenide (SnAs) stands out as a semiconductor material, finding applications in the realm of electronics and semiconductor devices. With a direct energy gap, Tin Arsenide requires relatively small amounts of energy for electron and hole transitions, rendering it advantageous for select applications in optoelectronics.

Tin Arsenide Sputtering Target Specifications

Tin Arsenide Sputtering Target Handling Notes

1. Indium bonding is recommended for Tin Arsenide Sputtering Targets, due to some of its characteristics not amenable to sputtering like brittleness, low thermal conductivity, etc.
2. This material has a low thermal conductivity and is susceptible to thermal shock.

Tin Arsenide Sputtering Target Application

Tin Arsenide Sputtering Targets find versatile applications in sputter deposition processes, particularly in the fabrication of semiconductor devices like thin film transistors (TFTs) and various integrated circuit components. Leveraging the semiconductor nature of Tin Arsenide (SnAs), these targets play a crucial role in crafting devices tailored for optoelectronic applications, including the production of photodetectors and lasers. The adaptability of Tin Arsenide Sputtering Targets underscores their significance in the realm of semiconductor technology and optoelectronics.

Tin Arsenide Sputtering Target Packaging

Our Tin Arsenide Sputtering Target is carefully handled during storage and transportation to preserve the quality of our products in their original condition.