Germanium Antimony Telluride Sputtering Target Description

Germanium Antimony Telluride Sputtering Target is a material used in thin-film deposition processes, particularly in the semiconductor industry. Sputtering is a form of physical vapor deposition (PVD) in which thin films are deposited on a substrate by bombarding a solid target material with high-energy ions.

GeSbTe is a compound semiconductor material that exhibits unique properties, making it suitable for various applications. It is commonly used in the production of phase-change random access memory (PRAM) devices, where its ability to switch between amorphous and crystalline states at different temperatures allows data storage and retrieval. GeSbTe-based thin films can also be used in other electronic devices, such as optical storage media, rewritable CDs, DVDs, and Blu-ray discs.

Germanium Antimony Telluride Sputtering Target Specifications

Germanium Antimony Telluride Sputtering Target Handling Notes

1. Indium bonding is recommended for Germanium Antimony Telluride Sputtering Target, due to some of its characteristics not amenable to sputtering like brittleness, low thermal conductivity, etc.
2. This material has a low thermal conductivity and is susceptible to thermal shock.

Germanium Antimony Telluride Sputtering Target Application

Germanium Antimony Telluride Sputtering Target is typically used in applications where a pure silicon film is required, such as in the fabrication of integrated circuits, solar cells, optical coatings, and other electronic and semiconductor devices.

Germanium Antimony Telluride Sputtering Target Packaging

Our Germanium Antimony Telluride Sputtering Target is carefully handled during storage and transportation to preserve the quality of our products in their original condition.