Substrate Manipulation
SH, Substrate Manipulators / Deposition Stages
- Uniform heating of substrates from small samples to 6 inch wafer diameter
- Wafer temperatures up to 1200°C
- Heater materials: Tungsten, Tantalum, Graphite, Silicon Carbide, Platinum, PBN encapsulated
- Special heaters for oxygen and reactive gas atmosphere
- Water-cooled ceramic bearings for continuous rotation
- Full adaptability to sample transfer by user-specific linear travel and custom sample holders
- Option for masked deposition:
- transferable wafer mask stage
SH-O, Oxygen Resistant Substrate Manipulator / Heated Station
- Oxygen resistance option of the SH substrate manipulator
- Substrate temperatures up to 700°C with Ni-alloy heater; up to 900°C with noble-metal-alloy heater
- up to 900°C with SiC heater depending on oxygen partial pressure
- Pressure range from UHV up few mbar oxygen
- Water cooled ceramic bearings for continuous rotation
- Substrate sizes up to 6 inch
WH, Wafer Heater / Sample Heater / Heated Stages
- Tungsten, tantalum, SiC or graphite heaters
- Wafer temperatures up to 1200°C
- Clean operation and high reliability
- Substrate sizes from 1" up to 6"
- Oxygen resistance and customized solutions possible
WH40, Loadlock Heater
- Tantalum or Tungsten heater
- Wafer or chamber temperatures according to setup (~400°C)
- Clean operation and high reliability
- Suitable for substrate sizes from 1" to 6"
- Customized solutions possible
