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MBE, Molecular Beam Epitaxy System

Dr. Eberl MBE-Komponenten GmbH, Germany

OCTOPLUS 500 EBV Si/SiGe, Metals, Magnetics, Oxides, Topological Insulators MBE System

Si/SiGe, Metals, Magnetics, Oxides, Topological Insulators MBE System

 

MBE system OCTOPLUS 500 EBV
  • State-of-the-art SiGe and other materials MBE system
  • Ideally suited for Si/SiGe epitaxial growth or metal deposition
  • Up to 10 source ports: 2 ports DN250CF (O.D. 12"), 8 ports DN63CF (O.D. 4.5") and DN100CF (O.D. 6")
  • Large capacity e-beam evaporators, wide range of effusion cells and gas sources
  • Substrate sizes 2", 3", 4" or multi-wafer size
  • Strong UHV pumping system (TSP, ion getter, cryo and/or turbo pump)
  • LN2 cooling shroud
  • In-situ characterization capability
  • Strong support by MBE experts

 

The OCTOPLUS 500 EBV system has been developed for the growth of high quality Si/SiGe heterostructures on 4 inch Si substrates. Optionally the system can be upgraded to 6 inch substrate size. The MBE chamber is equipped with two electron beam evaporating guns and up to 8 effusion cells or gas injectors for deposition or surface treatment.

Among the wide range of materials covered by products of Dr. Eberl MBE-Komponenten GmbH we have very detailed knowledge in the group IV elements C, Si and Ge MBE.

Based on many years of active research experience in the field of growth and doping applications with these elements our team develops and manufactures the OCTOPLUS 500 EBV system and all essential components. Each product is assembled and carefully tested in-house.

The beam flux produced by the electron guns can be monitored by cross-beam quadrupole mass spectrometers on the elements employed. The substrate manipulator applies pyrolytic graphite or alternatively tungsten or tantalum heaters. The OCTOPLUS 500 EBV MBE system is field-proven and ideally suited for metals, magnetics, oxides, topological insulators and Si/SiGe heterostructure growth in research and production processes.

Outstanding features of the OCTOPLUS 500 EBV are the high reliability and versatility of the system.

The standard version of the OCTOPLUS 500 EBV comprises 10 radially arranged source ports, from which we recommend 8 ports to be used for effusion cells, sublimation sources or comparable components. Two large ports DN250CF are provided for e-beam evaporation guns. The e-beam evaporators can also be a multi-pocket version EBVM. A rapid pump-down load lock chamber with a horizontal working transfer rod system or a central transfer module allows easy substrate introduction without breaking the vacuum of the MBE chamber.

 

Options for OCTOPLUS 500 EBV:

  • Additional load-lock or buffer chambers

  • Wafer transfer system

  • Effusion cells, e-beam-evaporators, sublimation sources, valved cracker sources, gas sources, manipulators

  • Software / hardware control system

  • Pumping system (turbo molecular pumps, cryopumps, ion getter pumps, etc.)

  • In-situ characterization tools, e.g. RHEED, BFM, Quartz, Pyrometer

  • Additional requirements

 

Technical data

Size of deposition chamber 550 mm I.D.
Base pressure < 5x10-11 mbar
Pumping TSP, ion getter pump, cryopump and/or turbopump
Cooling Shroud LN2 or other cooling liquid on request
Substrate heater temperature up to 800°C, 1000°C or 1400°C
Substate size up to 4"
Bakeout temperature up to 200°C
Source ports up to 8 ports DN63CF and DN100CF plus two DN250CF for e-beam evaporators
Source types effusion cells, e-beam evaporators, sublimation sources, valved cracker sources, gas sources
Shutters soft-acting linear or rotary shutters
In-situ monitoring ion gauge, QCM, pyrometer, RHEED, QMA
Sample transfer linear transfer rod, manual or semi-automatic in face-down geometry
Load lock magazine with 8 substrates turbo-pumped
MBE control software Tusker
Service system installation and acceptance testing
MBE training by MBE experts

 

Examples for applications and corresponding sources

 

Effusion Cells
WEZNTEZ
OMEHTEZ

Sublimation Sources
SUKOSUSI
HTSDECO

Valved Sources
VACSVGCS
VCSVSCS

Plasma Sources

E-Beam
Evaporators
EBVV

III/V

Ga, In, Al

C, Si doping

As, P, Sb

 

 

II/VI

Zn, Cd, Be

 

S, Se, Te

N-doping

 

IV

Ge, Sn, Pb

B, P, Sb doping

 

 

Si, Ge

GaN

Ga, In, Al

 

 

N

 

Metals

Cu, Al, Ni, Co, ...

 

 

 

Pt, Ta, Pd, Mo, W

Topological Insulators

Ge, Sn, Te, Bi, GeSb

 

Se, Te

 

B

Graphene / Silicene

 

C, Si

 

 

 

Oxides

Fe, Ni, Mn, Bi, Eu,
Ga, ...

 

 

O

 

Thin Film Solar Cells

Cu, Ga, In, Zn, NaF,
Fe, Sn

 

S, Se

 

 

We are happy to discuss your MBE system specifications and give competent advice for your application.
The OCTOPLUS 500 EBV is in use in leading laboratories. On demand we transmit a detailed list of references. Please contact our sales department for further questions and specification information.

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