• Compatible with all MBE systems
• Conical shaped crucibles with crucible capacities 2, 5, and 12 cm³
• Most effective Ta-wire heating system
• Large flux distribution providing excellent homogeneities
• High reliability and long lifetime
• Optional: on cell flange integrated shutter

• Cluster sources increase the capacity of UHV systems
• Customized designs with all kind of effusion cells
• Compact and intelligent cell design
• Various crucibles available
• Solutions with integrated cooling shrouds and shutters

Data Sheet

• 10²⁰/cm³ n-type doping in Si/SiGe MBE
• P-doping through GaP decomposition
• High P incorporation rate
• Minimum memory effects
• Easy to install and to operate
• Sharp doping profiles
• Precise and fast flux control

• Thermal sublimation of silicon from high purity intrinsic or highly doped Si filament
• Excellent growth of thin silicon layers
• Compatible with most MBE systems
• Water-cooled electrical contacts
• Inner filament shielding with pure silicon parts
• No ceramic parts in the hot zone

• High-mobility GaAs p-type doping
• Fast and precise flux control
• Ultra-high purity pyrolytic graphite (PG) filament
• Water-cooled electrical contacts
• Inner filament shielding with pure pyrolytic graphite parts
• No ceramic or metal parts in the hot zone

• Up to 10²¹/ccm Boron doping in Si-MBE
• Evaporation of elemental Boron or Si-B alloy in vertical e-beam evaporator
• Small dimensions; can be used in DN63CF
• (O.D. 4.5“) effusion cell ports; hearth volume 5 cm³
• Long filament lifetime and easy maintenance
• 270° beam deflection
• High frequency x-y-beam deflection system
• Silicon shielding parts for use in SiGe-MBE

Data Sheet