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ALD, Atomic Layer Deposition Systems

ANRIC Technologies, USA

AT650P 6" Plasma ALD

Cost effective, Desktop Plasma ALD

  • Plasma ALD at the cost of a thermal system
  • Small Footprint (38.1 cm; 15″ across) Desktop Plasma ALD
    • Accommodates samples of 6″ diameter  or smaller.
    • Optional customizable chucks.
  • Inchfab compact, high efficiency remote 300 watt ICP source
  • Integrated matching network
  • Accommodates samples of 6″ diameter with optional customizable chucks.
  • Warm walled aluminum chamber with heated sample holder from 40 – 400°C
  • 3 organometallic source precursors to 185°C  (1 at  standard conditions).
  • Up to 4 oxidant/reductant sources (MFC controlled).
  • High temperature compatible fast pulsing ALD valves with ultrafast MFC for integrated inert gas purge
  • Temperature range to 400°C
  • High exposure available with static processing mode

 

SPECIFICATION

  • Substrate temperatures from RT to 400°C ± 1 °C; Precursor temperatures from RT to 185°C ± 2°C (w/ heating jacket)
  • Small footprint (15″ by 15″), bench top installation and fully cleanroom compatible
  • Simple system maintenance and low utilities cost.
  • Streamlined chamber design and small chamber volume
  • Fast cycling capability  and high exposure, deep penetration processing available
  • Full HW and SW interlocks for safe operation even in multi-user environment.

 

OPTIONS

  • Customized chuck/platen
  • QCM (Quartz Crystal Microbalance)
  • Additional Counter reactant lines (MFC controlled) – up to 2 additional
  • Optional 4th heated precursor (185°C), all available with optional pressure boost technology
  • External control – PC/software link (allows programing and running, remotely)
  • Higher than standard pressure regime 
  • Customized systems

 

FACILITIES


For detailed instructions see our presentation and video instructions: “AT650P Installation and Start-up

  • N2 purge gas should be >99.9995% with a shutoff valve (regulated to 10 – 30 psi, metal sealed).
  • Input line is 1/4 female VCR compression fitting
  • Attach > 99.9995% nitrogen (UHP) purge gas via 1/4″ metal line to the 1/4″ compression fitting on back
  • Attach 90-110 psi CDA (clean dry air) via 1/4″ polyethylene  tubing or metal line to the other 1/4″ compression fitting marked CDA (Clean Dry Air)
  • Min 19.5cfm wet pump (**PTFE vacuum fluid (like Fomblin) required) (Dry pump is optional)
  • NW40 (1.5″) connection and also exhaust line (with > 5cfm draw)
  • Greater than 1 meter should use NW50  exhaust line
  • Precursor’s attach via female VCR elbows (always use new gaskets).
  • Elbow: 1/4″ gasket first (with gloves on)
  • For precursor attachment please refer to “AT650P Tool and Software Operation”

 

SOFTWARE

For detailed instructions see our presentation and video instructions: “AT650P Installation and Start-up

  • Human Machine Interface (HMI) PLC system with a 10” touch screen
    panel
  • Advanced controls suitable for the deposition of standard ALD cycles as
    well as e.g. Nanolaminates, Doped Thin Films and Ternary Thin Films
  • Recipe database for high quality, tested processes
  • Custom recipe input screen
  • Real time display of process status
  • Individually programmable heated source temperatures
  • Built-in pulsing sequences for ternary compounds and nano-laminates
  • Quick running with simple questions to get user going
    • Input subcycles and overall cycles

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